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Photoreflectance study of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates

✍ Scribed by H. Qiang; E. Look; Fred H. Pollak; Kai Shum; Y. Takiguchi; R.R. Alfano; S.F. Fang; H. Morkoç

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
359 KB
Volume
32
Category
Article
ISSN
0927-0248

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Step-Bunching Evidence in Strained InxGa
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✍ de Sales, F.V. ;Soler, M.A.G. ;Ugarte, D. ;Quivy, A.A. ;da Silva, S.W. ;Martini, 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 2 views

In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol