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The growth and characterization of Si1 − xGex multiple quantum wells on Si(110) and Si(111)

✍ Scribed by P.E. Thompson; T.L. Kreifels; M. Gregg; R.L. Hengehold; Y.K. Yeo; D.S Simons; M.E. Twigg; M. Fatemi; K. Hobart


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
368 KB
Volume
157
Category
Article
ISSN
0022-0248

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