Growth and characterization of strain-compensated InAsPGaInP and InGaAsGaInP multiple quantum wells

✍ Scribed by C.W. Tu; X.B. Mei; C.H. Yan; W.G. Bi

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 362 KB
• Volume: 35
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(95)01434-9

✦ Synopsis

We have shown that strain compensation is effective in increasing the critical layer thickness or the critical number of periods in a multiple quantum well (MQW) structure and in improving thermal stability. Compared with a strain-uncompensated InAso.4Po.6/InP MQW (1.3% strain) on InP substrates, strain-compensated InAso.4Po.6/GayIn ~_yP MQW in a p-i-n structure exhibits superior structural and optical properties, especially electroabsorption characteristics that is suitable for modulator applications at 1.3 lam. Strain-compensated Ino.3Gao.7As/GayIn 1 y P MQWs on GaAs substrates exhibit better photoluminescence properties and are shown to be more thermally stable.