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Investigation of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells

✍ Scribed by T. Tsuchiya; M. Komori; R. Tsuneta; H. Kakibayashi

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
454 KB
Volume
145
Category
Article
ISSN
0022-0248

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The local atomic structure and lattice dynamics are studied for strain-compensated \(\mathrm{Si}_{1-\mathrm{x}-\mathrm{y}} \mathrm{Ge}_{\mathrm{x}} \mathrm{C}_{\mathrm{y}}\) layers grown by molecular beam epitaxy on \(\mathrm{Si}\) (001) substrates. The layers were characterized by transmission elec