✦ LIBER ✦

Synthesis of highly strained InyGa1 − yP/InxGa1 − xAs/InyGa1 − yP quantum well structures with strain compensation

✍ Scribed by C.H. Yan; C.W. Tu

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 330 KB
Volume: 164
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)01039-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Ion-channeling studies of InyGa1−yAs/GaA

Ion-channeling studies of InyGa1−yAs/GaAs strained-layer single and multiple quantum-well structures

✍ G.W. Flemig; R. Brenn; E.C. Larkins; S. Bürkner; G. Bender; M. Baeumler; J.D. Ra 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 944 KB

Pressure dependence of photoluminescence

Pressure dependence of photoluminescence in InxGa1 − xAs/AlyGa1 − yAs strained quantum wells with different widths

✍ Zhen-Xian Liu; Guo-Hua Li; He-Xiang Han; Zhao-Ping Wang 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Realization of sharp excitonic features

Realization of sharp excitonic features in highly strained GaAs/InxGa1−xAs multiple quantum wells grown on GaAs(100) substrates

✍ Li Chen; K.C. Rajkumar; A. Madhukar; Wei Chen; S. Guha; K. Kaviani 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 393 KB

Some properties of strained InxGa1-xAs/A

Some properties of strained InxGa1-xAs/Al0.28Ga0.72As quantum well structures studied using low temperature photoluminescence

✍ S.F. Yoon; K. Radhakrishnan; H.M. Li 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 315 KB

Low temperature photoluminescence measurements were carried out on pseudomorphlcally strained In \(\mathrm{Ga}_{1-\mathrm{A}} \mathrm{As}-\mathrm{Al} \mathrm{O}_{0.28} \mathrm{Ga}_{0.72} \mathrm{As}\) ternary-on-ternary heterostructures grown by molecular beam epitaxy to investigate the change in th