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Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy

✍ Scribed by R. Schwedler; B. Gallmann; K. Wolter; A. Kohl; K. Leo; H. Kurz; F.H. Baumann

No coin nor oath required. For personal study only.

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Interface properties of strained InGaAs/

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A luminescence study of the interface qu

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