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Photoelectric properties ofp+-njunctions based on 4H-SiC ion-implanted with aluminum

✍ Scribed by G. N. Violina; E. V. Kalinina; G. F. Kholujanov; G. A. Onushkin; V. G. Kossov; R. R. Yafaev; A. Hallén; A. O. Konstantinov

No coin nor oath required. For personal study only.

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