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A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

✍ Scribed by E. V. Kalinina; V. G. Kossov; R. R. Yafaev; A. M. Strel’chuk; G. N. Violina

No coin nor oath required. For personal study only.

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Photoelectric properties ofp+-njunctions

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High field-effect mobility in n-channel

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