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Photo-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors

✍ Scribed by Mooney, P. M.


Book ID
121496515
Publisher
American Institute of Physics
Year
1983
Tongue
English
Weight
589 KB
Volume
54
Category
Article
ISSN
0021-8979

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Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot