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A study of grown-in impurities in silicon by deep-level transient spectroscopy

✍ Scribed by A. Rohatgi; J.R. Davis; R.H. Hopkins; P.G. McMullin

Book ID
107856623
Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
930 KB
Volume
26
Category
Article
ISSN
0038-1101

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The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional