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A study of iron-related centers in heavily boron-doped silicon by deep-level transient spectroscopy

✍ Scribed by Awadelkarim, O. O.; Monemar, B.

Book ID
120594750
Publisher
American Institute of Physics
Year
1988
Tongue
English
Weight
819 KB
Volume
64
Category
Article
ISSN
0021-8979

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## Abstract Deep level transient spectroscopies (DLTS) applied to Schottky junctions made on homoepitaxial boron‐doped diamond films show the existence of two traps. A deep acceptor, negatively charged and strongly attractive for holes, 1.57 eV above the valence band edge displays the characteristi