𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Deep-level transient spectroscopy in the depletion zone of boron-doped homoepitaxial diamond films

✍ Scribed by Muret, P.; Saby, C.; Pruvost, F.; Deneuville, A.

Book ID
121674217
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
119 KB
Volume
9
Category
Article
ISSN
0925-9635

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Deep levels in homoepitaxial boron-doped
Deep levels in homoepitaxial boron-doped diamond films studied by capacitance and current transient spectroscopies
✍ Muret, Pierre ;Pernot, Julien ;Teraji, Tokuyuki ;Ito, Toshimichi πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 341 KB

## Abstract Deep level transient spectroscopies (DLTS) applied to Schottky junctions made on homoepitaxial boron‐doped diamond films show the existence of two traps. A deep acceptor, negatively charged and strongly attractive for holes, 1.57 eV above the valence band edge displays the characteristi

Electrically active defects in boron dop
Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques
✍ Muret, Pierre ;Kumar, Amit ;Volpe, Pierre-Nicolas ;Wade, Mamadou ;Pernot, Julien πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 642 KB

## Abstract Homoepitaxial thin films of boron doped diamond are investigated with the help of Fourier transform deep level transient spectroscopy (FT‐DLTS) and high resolution isothermal transient spectroscopy (HR‐ITS) in order to determine the properties of hole traps. Conductivity studies and oth