Ru/WCoCN as a seedless Cu barrier system
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Dung-Ching Perng; Jia-Bin Yeh; Kuo-Chung Hsu
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Article
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2009
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Elsevier Science
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English
β 531 KB
A four inch p-type Si(1 0 0) wafer was cleaned using standard procedures. The stack of Cu/10 nm Ru/Si and Cu/5 nm Ru/5 nm WCoCN/Si were prepared by three-gun radio frequency (RF) sputtering system without vacuum breaks between the barrier and Cu sputtering. The target diameter is 2 in. and purity is