Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

✍ Scribed by Dung-Ching Perng; Jia-Bin Yeh; Kuo-Chung Hsu

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 531 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2009.08.039

✦ Synopsis

A four inch p-type Si(1 0 0) wafer was cleaned using standard procedures. The stack of Cu/10 nm Ru/Si and Cu/5 nm Ru/5 nm WCoCN/Si were prepared by three-gun radio frequency (RF) sputtering system without vacuum breaks between the barrier and Cu sputtering. The target diameter is 2 in. and purity is above 99.95% for Cu, Ru and W 70 Co 3 C 27 . The base pressure was below 2 Â 10 À5 Torr and working pressure was set to 8 mTorr with 8 sccm Ar gas flow rate. The WCoCN film was deposited using W 70 Co 3 C 27 target with gas mixture of 5 sccm Ar and 5 sccm N 2 . In order to evaluate thermal stability of the barrier on Si substrate, samples were performed rapid thermal annealing (RTA) in ULVAC MILA-5000 system at various temperatures for 30 min with