Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer
โ Scribed by S. K. Lilov; I. Y. Yanchev
- Book ID
- 111997701
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 377 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1616-301X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
On the basis of the accomplished investigation is has been shown that in the known schemes for growing of Sic epitaxial layers from the gas phase in quasiclosed volume it takes place an excretion of the redundant silicon upon the front of crystallization, its accumulation in the gas phase up to the
Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place