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Investigation of the evaporation mechanism during silicon carbide crystal growth from vapour phase

โœ Scribed by S. K. Lilov

Publisher
Springer
Year
1995
Tongue
English
Weight
831 KB
Volume
14
Category
Article
ISSN
0261-8028

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๐Ÿ“œ SIMILAR VOLUMES

Study of the evaporation mechanism in si
Study of the evaporation mechanism in silicon carbide crystals growth from vapour phase
โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 252 KB ๐Ÿ‘ 2 views

Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place

Investigation of the thermal conditions
Investigation of the thermal conditions during silicon carbide crystal growth
โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 322 KB ๐Ÿ‘ 1 views

In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra