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Parallel solvers for the depletion region identification in metal semiconductor field effect transistors

โœ Scribed by A. Nachaoui; J. Abouchabaka; N. Rafalia


Publisher
Springer US
Year
2005
Tongue
English
Weight
266 KB
Volume
40
Category
Article
ISSN
1017-1398

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Experimental study on isolation edge eff
โœ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati