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A simple theoretical analysis of the gate capacitance of metal-oxide-semiconductor field effect devices of non-parabolic materials in the presence of a parallel magnetic field

✍ Scribed by K.P. Ghatak; S.N. Biswas


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
547 KB
Volume
37
Category
Article
ISSN
0038-1101

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