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Oxygen precipitation in Czochralski grown silicon heat treated at 550 °C

✍ Scribed by Cheung, J; Messoloras, S; Rycroft, S; Stewart, R J; Binns, M J


Book ID
121199925
Publisher
Institute of Physics
Year
2000
Tongue
English
Weight
174 KB
Volume
15
Category
Article
ISSN
0268-1242

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In the present work new results on the formation of oxygen-and carbon-related luminescence centers in Cz-Si heat treated at T ¼ 600 C are reported. Some characteristic features of thermal defect formation dependent on the heat treatment regimes were studied. At the early stages of heat treatment two