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Oxygen precipitation and microdefects in Czochralski-grown silicon crystals

✍ Scribed by Yasutake, K. ;Umeno, M. ;Kawabe, H.


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
709 KB
Volume
83
Category
Article
ISSN
0031-8965

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Some impurities are known to modify the properties of grown-in microdefects in Si crystals at relatively low concentrations when the only operating mechanism is trapping of either vacancies (V) or self-interstitials (I), or both, by the major impurity state. First of all, doping affects the critical