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Oxygen precipitation at the oxidation-induced defects in silicon

โœ Scribed by Sato, N. ;Kajiwara, K. ;Shibata, A.


Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
120 KB
Volume
16
Category
Article
ISSN
0031-8965

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Precipitates and defects in silicon co-i
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Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitate