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A model for the formation of lattice defects at silicon oxide precipitates in silicon

✍ Scribed by J. Vanhellemont; O. De Gryse; P. Clauws

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 201 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.10.002

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