𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films

✍ Scribed by Younis, Adnan; Chu, Dewei; Li, Sean

Book ID
120496113
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
586 KB
Volume
45
Category
Article
ISSN
0022-3727

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Mechanism of nonvolatile resistive switc
Mechanism of nonvolatile resistive switching in graphene oxide thin films
✍ Fei Zhuge; Benlin Hu; Congli He; Xufeng Zhou; Zhaoping Liu; Run-Wei Li πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 486 KB

The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films prepared by the vacuum filtration method has been investigated by macroscopic currentvoltage (I-V) measurements and conducting atomic force microscopy (CAFM). Detailed I-V measurements show that in metal/GO/Pt san