Mechanism of nonvolatile resistive switc
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Fei Zhuge; Benlin Hu; Congli He; Xufeng Zhou; Zhaoping Liu; Run-Wei Li
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Article
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2011
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Elsevier Science
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English
β 486 KB
The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films prepared by the vacuum filtration method has been investigated by macroscopic currentvoltage (I-V) measurements and conducting atomic force microscopy (CAFM). Detailed I-V measurements show that in metal/GO/Pt san