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Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure

✍ Scribed by Horng-Shyang Chen; Chih-Feng Lu; Dong-Ming Yeh; Chi-Feng Huang; Jian-Jang Huang; Chih-Chung Yang

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Dependence of spectral behavior in an In

✍ Lu, Chih-Feng; Huang, Chi-Feng; Chen, Yung-Sheng; Yang, C. C. 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 745 KB

Deep-level transient spectroscopy studie

✍ Mikhail M. Sobolev; Natalia M. Shmidt 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Study of polarization properties of ligh

✍ H. Huang; Y. Wu 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 789 KB

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✍ N. I. Bochkareva; D. V. Tarkhin; Yu. T. Rebane; R. I. Gorbunov; Yu. S. Lelikov; 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 226 KB

Effect of well profile on optical and st

✍ Shim, H. W. ;Suh, E.-K. ;Hong, C.-H. ;Kim, Y.-W. ;Lee, H. J. 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 124 KB

Influence of AlGaN/GaN superlattice inse

✍ Cheng-Liang Wang; Ming-Chang Tsai; Jyh-Rong Gong; Wei-Tsai Liao; Ping-Yuan Lin; 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 383 KB