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Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes

✍ Scribed by H. Huang; Y. Wu


Book ID
125845046
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
789 KB
Volume
106
Category
Article
ISSN
0021-8979

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## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req