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Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

✍ Scribed by Chitnis, Ashay; Chen, Changqing; Adivarahan, Vinod; Shatalov, Maxim; Kuokstis, Edmundas; Mandavilli, Vasavi; Yang, Jinwei; Khan, M. Asif

Book ID
118023058
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
456 KB
Volume
84
Category
Article
ISSN
0003-6951

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## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__‐plane GaN and __c__‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__‐ and __c__‐pla