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Growth pressure dependence of optical and structural properties of a-plane InGaN/GaN multi-quantum wells on r-plane sapphire

✍ Scribed by Keun-Man Song; Jong-Min Kim; Chan-Soo Shin; Sung-Min Hwang; Yong-Gon Seo; Bo-Hyun Kong; Hyung-Koun Cho; Dae-Ho Yoon

Book ID
116630125
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
695 KB
Volume
339
Category
Article
ISSN
0022-0248

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## Abstract We report on the optical properties of a series of non‐polar __a__‐plane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking