## Abstract InGaAsN Tβshaped quantum wire (TβQWR) latticeβmatched to GaAs was grown by metal organic vapourβphase epitaxy (MOVPE) and its optical property was investigated. The InGaAsN TβQWR was observed at the intersection of two InGaAsN quantum wells (QWs) on (001) and (110) surfaces, namely QW1
Optical study of GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires grown by MOVPE
β Scribed by Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro
- Book ID
- 123282887
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 649 KB
- Volume
- 370
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w
We report on a photoluminescence excitation study of a lateral array of GaAs quantum wires grown by flow rate modulation epitaxy on 4 Β΅m pitch V-grooves. Several excitonic transitions exhibiting a strong polarization anisotropy and involving the ground and excited quantum wire subbands are clearly o