Optical properties of a lateral array of GaAs quantum wires grown by flow rate modulation epitaxy

✍ Scribed by A. Hamoudi; M. Ogura; X.L. Wang; T. Okada

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 73 KB
• Volume: 22
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1997.0464

✦ Synopsis

We report on a photoluminescence excitation study of a lateral array of GaAs quantum wires grown by flow rate modulation epitaxy on 4 µm pitch V-grooves. Several excitonic transitions exhibiting a strong polarization anisotropy and involving the ground and excited quantum wire subbands are clearly observed.