✦ LIBER ✦

Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells

✍ Scribed by Marie, X.; Barrau, J.; Amand, T.; Carrere, H.; Arnoult, A.; Fontaine, C.; Bedel-Pereira, E.

Book ID: 114455972
Publisher: The Institution of Electrical Engineers
Year: 2003
Tongue: English
Weight: 204 KB
Volume: 150
Category: Article
ISSN: 1350-2433
DOI: 10.1049/ip-opt:20030187

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Band structure and optical gain of InGaA

Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells

✍ H. Carrère; X. Marie; J. Barrau; T. Amand 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 196 KB

Band structure calculation of InGaAsN//G

Band structure calculation of InGaAsN//GaAs, InGaAsN//GaAsP//GaAs and InGaAsN//InGaAsP//InP strained quantum wells

✍ Carrere, H.; Marie, X.; Barrau, J.; Amand, T.; Bouzid, S.B.; Sallet, V.; Harmand 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 271 KB

Numerical study on InGaAsN/GaAs multiple

Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

✍ Y.-K. Kuo; S.-H. Yen; M.-W. Yao; M.-C. Tsai; M.-L. Chen; B.-T. Liou 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 934 KB

Spectra of differential gain and linewid

Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

✍ Wartak, M. S. ;Weetman, P. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 749 KB

## Abstract The differential gain and linewidth enhancement factor (__α__ ‐factor) of a new material system InGaAsN/GaAs is studied using the 10‐band **__k__** · **__p__** Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of the Schrödinger and Poisson equations is a

Thermally detected optical absorption an

Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells

✍ Bouragba, T.; Mihailovic, M.; Carrere, H.; Disseix, P.; Vasson, A.; Leymarie, J. 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 296 KB

Electron spin dynamics in GaAsN and InGa

Electron spin dynamics in GaAsN and InGaAsN structures

✍ Lagarde, D. ;Lombez, L. ;Marie, X. ;Balocchi, A. ;Amand, T. ;Kalevich, V. K. ;Sh 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 734 KB

## Abstract We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN quantum wells (QW), showing that a strong electron spin polarisation can persist at room temperature. We demonstrate that the spin dynamics in these dilute nitride structures is governed by a spin‐depend