Electron spin dynamics in GaAsN and InGaAsN structures

✍ Scribed by Lagarde, D. ;Lombez, L. ;Marie, X. ;Balocchi, A. ;Amand, T. ;Kalevich, V. K. ;Shiryaev, A. ;Ivchenko, E. ;Egorov, A.

• Book ID: 105364093
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 734 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200673009

✦ Synopsis

Abstract

We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN quantum wells (QW), showing that a strong electron spin polarisation can persist at room temperature. We demonstrate that the spin dynamics in these dilute nitride structures is governed by a spin‐dependent recombination process of free conduction electrons on deep paramagnetic centres. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)