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Band structure calculation of InGaAsN//GaAs, InGaAsN//GaAsP//GaAs and InGaAsN//InGaAsP//InP strained quantum wells

✍ Scribed by Carrere, H.; Marie, X.; Barrau, J.; Amand, T.; Bouzid, S.B.; Sallet, V.; Harmand, J.-C.

Book ID
114456109
Publisher
The Institution of Electrical Engineers
Year
2004
Tongue
English
Weight
271 KB
Volume
151
Category
Article
ISSN
1350-2433

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Spectra of differential gain and linewid
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## Abstract The differential gain and linewidth enhancement factor (__Ξ±__ ‐factor) of a new material system InGaAsN/GaAs is studied using the 10‐band **__k__** Β· **__p__** Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of the SchrΓΆdinger and Poisson equations is a