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Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD

✍ Scribed by J. Hellara; F. Hassen; H. Maaref; V. Souliere; Y. Monteil

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
117 KB
Volume
17
Category
Article
ISSN
1386-9477

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A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn