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Study of surface microtopography of InAlAs/InP heterostructures grown by MBE

✍ Scribed by Lu Taijing; Mai Zhenhoug; Jiang Chao; T. Sekiguchi; C.K. Ong; T. Ogawa; Zhou Jun Ming; K. Sumino

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
334 KB
Volume
92
Category
Article
ISSN
0038-1098

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A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn