Optical monitoring of the growth of 3C SiC on Si in a CVD reactor
✍ Scribed by Leycuras, André
- Book ID
- 122350662
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 399 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0925-9635
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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro
The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ž . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a