Temperature-tunable silicon-wafer etalon
โ
T. Niemi; S. Tammela; T. Kajava; M. Kaivola; H. Ludvigsen
๐
Article
๐
1999
๐
John Wiley and Sons
๐
English
โ 180 KB
Figure 3 Simulated and measured S-parameters of the Ga In PrGaAs monolithic amplifier 0.51 0.49 . V s 4 V and V s y2.5 V . This single-stage amplifier ds g s achieved a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were