Ultrasonic in-process measurement of silicon wafer thickness
β Scribed by M. Tsutsumi; Y. Ito; M. Masuko
- Publisher
- Elsevier Science
- Year
- 1982
- Tongue
- English
- Weight
- 352 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0141-6359
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
An investigation of the behavior of bare, unprocessed silicon wafers during their loading and transport in wafer cassettes is documented. Semiconductor process tools can generate sufficient vibration to cause the current 200-mm diameter wafers to vibrate inside the cassettes leading to particle gene
D e p o s i t i o n o f T h i c k P o l y s i l i c o n L a y e r s on Y t r e s s -r e d u c e d S i l i c o n Wafers I n t r o d u c t i o n The d e p o s i t i o n o f t h i c k p o l y s i l i c o n l a y e r s on o x i d i z e d s i l i c o n s