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Measurement of wafer temperature by interference

โœ Scribed by D. Bollmann; K. Haberger


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
196 KB
Volume
19
Category
Article
ISSN
0167-9317

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Figure 3 Simulated and measured S-parameters of the Ga In PrGaAs monolithic amplifier 0.51 0.49 . V s 4 V and V s y2.5 V . This single-stage amplifier ds g s achieved a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were