Characterization of silicon wafers by transient microwave photoconductivity measurements
β Scribed by A. Sanders; M. Kunst
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 779 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
The purpose of th s paper i.s to describe a new experimental method which allows to obtain the drift velocity, the diffusion coefficient and the life time of minority carriers in semiconductors of usual resistivity. These coefficients are measured using transient photoconductivity response.
A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (t g ) using transient capacitance method for lateral metal-oxidesemiconductor (MOS) capacitor. The later