Temperature-tunable silicon-wafer etalon for frequency chirp measurements
✍ Scribed by T. Niemi; S. Tammela; T. Kajava; M. Kaivola; H. Ludvigsen
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 180 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Figure 3 Simulated and measured S-parameters of the Ga In PrGaAs monolithic amplifier 0.51 0.49 . V s 4 V and V s y2.5 V . This single-stage amplifier ds g s achieved a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were inferior to the simulated results Žgain: 12.9 dB, input VSWR: 1.15, and output VSWR: 1.08 at . the center frequency 2.4 GHz . However, by fine tuning the Ž . parasitic resistances R and R , and keeping other smalls d signal parameters unchanged, the simulated and measured S and S are nearly the same. This demonstrates that the 21 22 S-parameters of the Ga In PrGaAs MISFETs from the 0.51 0.49 pilot run are quite reproducible due to the high etching selectivity between Ga In P and GaAs. 0.51 0.49
CONCLUSION
In conclusion, we have fabricated the first MMIC amplifier using a Ga In PrGaAs MISFET. The success of 0.51 0.49 using the S-parameters of a pilot-run MISFET to design an MMIC means that the run-to-run reproducibility of the Ga In PrGaAs MISFET processing technique was very 0.51 0.49 good. The reproducibility was attributed to the excellent process control due to the high etching selectivity between Ga In P and GaAs.