Optical characterization of magnetron sputtered p-type ZnO thin films codoped with Ga and As

✍ Scribed by Park, Jang-Ho ;Seo, Ho-Yeon ;Jeong, Sang-Hun ;Lee, Byung-Teak

• Book ID: 105366591
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 127 KB
• Volume: 209
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127342

✦ Synopsis

Abstract

ZnO films codoped with Ga and As were characterized in detail. It was observed by I–V measurement that the films maintain p‐type characteristics even when the Ga/As ratio is as high as 9. Low‐temperature photoluminescence spectra revealed emissions at 3.36, 3.35, 3.30, and 3.22 eV, which were assigned to the D°X, the A°X, the two‐electron‐satellite D°X, and the DAP transition, respectively. A PL peak also appeared at 3.34 eV in the case of Zn~0.96~Ga~0.03~As~0.01~O and Zn~0.90~Ga~0.09~As~0.01~O films. X‐ray photoelectron spectroscopy indicated formation of Ga–As bonds with increasing Ga concentration, suggesting that the 3.34 eV peak is related to the Ga–As bonds.