Deposition and properties of B–N codoped p-type ZnO thin films by RF magnetron sputtering
✍ Scribed by Y.R. Sui; B. Yao; J.H. Yang; H.F. Cui; X.M. Huang; T. Yang; L.L. Gao; R. Deng; D.Z. Shen
- Book ID
- 108064197
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 312 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
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Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 °C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 × 10 16 cm -3 , resistivity of 15.9
## Abstract ZnO films codoped with Ga and As were characterized in detail. It was observed by __I__–__V__ measurement that the films maintain p‐type characteristics even when the Ga/As ratio is as high as 9. Low‐temperature photoluminescence spectra revealed emissions at 3.36, 3.35, 3.30, and 3.22