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Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

✍ Scribed by Hong-Yeol Kim; Travis Anderson; Michael A. Mastro; Jaime A. Freitas Jr.; Soohwan Jang; Jennifer Hite; Charles R. Eddy Jr.; Jihyun Kim

Book ID: 108166325
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 250 KB
Volume: 326
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.01.052

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Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5&#xa0;MeV protons

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