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Electrical characteristics of proton-irradiated Sc[sub 2]O[sub 3] passivated AlGaN/GaN high electron mobility transistors

✍ Scribed by Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.

Book ID: 126967444
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 318 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1559631

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