✦ LIBER ✦

On the low frequency noise mechanisms in GaN/AlGaN HFETs

✍ Scribed by Rumyantsev, S L; Deng, Y; Shur, S; Levinshtein, M E; Khan, M Asif; Simin, G; Yang, J; Hu, X; Gaska, R

Book ID: 121234849
Publisher: Institute of Physics
Year: 2003
Tongue: English
Weight: 137 KB
Volume: 18
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/18/6/333

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low 1/f Noise in AlGaN/GaN HFETs on SiC

Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates

✍ Rumyantsev, S. ;Levinshtein, M. E. ;Gaska, R. ;Shur, M. S. ;Khan, A. ;Yang, J. W 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB 👁 2 views

Experimental results of the low-frequency noise measurements on a large number of different AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on sapphire and SiC substrates have been presented. In the HEMTs grown on sapphire, the 1af noise is an order of magnitude (or more) higher than for

On the causes of low-frequency hysteresi

On the causes of low-frequency hysteresis and current dispersion in AlGaN/GaN HFETs

✍ P. A. Ivanov; M. E. Levinshtein 📂 Article 📅 2003 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 40 KB

Low-frequency noise in AlGaN/GaN heteros

Low-frequency noise in AlGaN/GaN heterostructure field effect transistors

✍ Kuksenkov, D.V.; Temkin, H.; Gaska, R.; Yang, J.W. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 70 KB

Low frequency noise and screening effect

Low frequency noise and screening effects in AlGaN/GaN HEMTs

✍ Garrido, J.A.; Calle, F.; Muñoz, E.; Izpura, I.; Sánchez-Rojas, J.L.; Li, R.; 📂 Article 📅 1998 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 402 KB

Low-frequency noise and mobility fluctua

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

✍ Garrido, J. A.; Foutz, B. E.; Smart, J. A.; Shealy, J. R.; Murphy, M. J.; Schaff 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 332 KB

Low-frequency noise in GaN/AlGaN heteros

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

✍ Rumyantsev, S. L.; Deng, Y.; Borovitskaya, E.; Dmitriev, A.; Knap, W.; Pala, N.; 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 323 KB