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On the causes of low-frequency hysteresis and current dispersion in AlGaN/GaN HFETs

✍ Scribed by P. A. Ivanov; M. E. Levinshtein

Book ID
110135410
Publisher
SP MAIK Nauka/Interperiodica
Year
2003
Tongue
English
Weight
40 KB
Volume
29
Category
Article
ISSN
1063-7850

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Low leakage current in AlGaN/GaN HFETs w
Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer
✍ Oshimura, Yoshinori ;Sugiyama, Takayuki ;Takeda, Kenichiro ;Iwaya, Motoaki ;Take πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 343 KB

## Abstract AlGaN/GaN heterostructure field‐effect transistors were grown by metalorganic vapor phase epitaxy on Fe‐doped GaN substrates with a preflow of the Mg source. We realized a low drain leakage current, 1.05 ¡A/mm, at __V__~DS~ = 20 V and __V__~GS~ =β€‰βˆ’5 V with __L__~GD~ = 3 ¡m. This leakage