Surface analysis to study the improvemen
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S. Cassette; F. Plais; J. Olivier
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Article
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1990
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John Wiley and Sons
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English
β 437 KB
## Abstract It has been shown that NH~3~, plasma treatment of GaAs surfaces before deposition of plasmaβenhanced chemical vapour deposited silicon nitride significantly improves the SiNH/GaAs interface properties. The decrease of surface state density together with the increase of Fermi level excur