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The electronic and structural properties of the silicon-gallium arsenide(110) interface

✍ Scribed by P.R. Dunstan; S.P. Wilks; S.R. Burgess; M. Pan; R.H. Williams; D.S. Cammack; S.A. Clark

Book ID
108418567
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
384 KB
Volume
123-124
Category
Article
ISSN
0169-4332

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## Abstract It has been shown that NH~3~, plasma treatment of GaAs surfaces before deposition of plasma‐enhanced chemical vapour deposited silicon nitride significantly improves the SiNH/GaAs interface properties. The decrease of surface state density together with the increase of Fermi level excur