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On the electrical behavior of V2O5/4H-SiC Schottky diodes

✍ Scribed by Bellone, S.; Di Benedetto, L.; Rubino, A.


Book ID
121227821
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
824 KB
Volume
113
Category
Article
ISSN
0021-8979

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## Abstract This work has been focused on characterization of thick 4H‐SiC layers produced by sublimation epitaxy. Nickel Schottky contacts have been fabricated in order to characterize the grown material and evaluate the interfacial layer between metal and semiconductor. The characterization study